ZrOx Negative Capacitance Field-Effect Transistor with Sub-60 Subthreshold Swing Behavior
نویسندگان
چکیده
Abstract Here we report the ZrO x -based negative capacitance (NC) FETs with 45.06 mV/decade subthreshold swing (SS) under ± 1 V GS range, which can achieve new opportunities in future voltage-scalable NCFET applications. The ferroelectric-like behavior of Ge/ZrO /TaN capacitors is proposed to be originated from oxygen vacancy dipoles. NC effect amorphous HfO 2 and films devices proved by sudden drop gate leakage, differential resistance (NDR) phenomenon, enhancement I DS sub-60 swing. 5 nm NCFETs a clockwise hysteresis 0.24 V, lower than 60 SS an 12% compared control device without . suppressed Al O 3 /HfO related partial switching dipoles forward sweeping due interfacial at interface.
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ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2021
ISSN: ['1556-276X', '1931-7573']
DOI: https://doi.org/10.1186/s11671-020-03468-w